IRF1010EZPBF |
RFQ for IRF1010EZPBF Required Field |
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| Technical/Catalog Information | IRF1010EZPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Rds On (Max) @ Id, Vgs | 8.5 mOhm @ 51A, 10V |
| Input Capacitance (Ciss) @ Vds | 2810pF @ 25V |
| Power - Max | 140W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 86nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF1010EZPBF IRF1010EZPBF |
| Product | Manufacturers | Pack | D/C |
| IRF1010EZPBF | - | 07+ | - |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features |
| `Advanced Process Technology`Ultra Low On-Resistance`Dynamic dv/dt Rating`175 Operating Temperature`Fast Switching`Repetitive Avalanche Allowed up to Tjmax`Lead-Free |
| Parameter | Max. | Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 84 | A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V (See Fig. 9) | 60 | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Package Limited) | 75 | |
| IDM | Pulsed Drain Current | 340 | |
| ID @ TC = 25 | Maximum Power Dissipation | 140 | A |
| Linear Derating Factor | 0.90 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy (Thermally Limited) | 99 | mJ |
| EAS (Tested ) | Single Pulse Avalanche Energy Tested Value | 180 | |
| IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting Torque, 6-32 or M3 screw | 10 lbfin (1.1Nm) |
